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Mitsui's SiC wafer, excellent in ultra
high-purity, high corrosion resistance, and heat resistance, can be used as
a recyclable wafer.
It is especially usefull as “dummy wafer and film thickness monitor wafer”
for LP-CVD and as “dummy wafer” for high temperature diffusion processes.
Features
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Ultra high-purity, non-porous SiC
wafer produced by CVD method with impurities of ppb level.
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No concern of process contamination
because of a markedly low diffusion coefficient of alkaline metal and
heavy metal in high temperature.
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High corrosion resistance to harsh
chemicals such as HF +HNO3, allows for only
deposited films to be removed easily and selectively by wet etching. So
repeated usage is possible and economically advantageous.
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Deposited films do not tend to peel
off due to the similar thermal expansion coefficients of SiC, SiN,
Poly-Si, etc. This results in a minimum of particles in the processes.
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There is very little thermal
deformation at high temperature process.
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Sales Devision
ADMAP INC. Sales Dept.
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Address
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5-6-4 Tsukiji Chuo-ku, Tokyo 104-8439 Japan
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Phone
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+81(3)3544-3640
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Fax
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+81(3)3544-3055
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Manufacture
ADMAP INC.
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Address
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3-16-2, Tamahara, Tamano,
Okayama-Pref. 706-0014, Japan
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Phone
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+81(863)23-3333
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Fax
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+81(863)23-3350
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